soutenance de thèse Adrian BALAN Vendredi 13 juillet à 10 H

 IMPMC, Université P. et M. Curie, 4, Place Jussieu, 75005 Paris
Salle de Conférence, 4ème étage, Tour 22-23, Salle 1

Graphene en régime du dopage élevé (Highly doped graphene)

This manuscript presents my work at the Institut de Minéralogie et de
Physique des Milieux Condensés of the Université Pierre et Marie Curie with the aim of obtaining the degree of doctor of philosophy in condensed matter physics. It begins with a short introduction to the study of graphene, its fabrication methods and a tight binding description of its electronic band structure. I then present in detail the fabrication method developed in our laboratory and used during my thesis and the protocol we developed for the fabrication of graphene based electrical devices as well as some results obtained on our samples using near  eld scanning microscopy.
In the  nal part I present the major experimental results of this work. Quantum e ects like Shubnikov de Haas oscillations and weak-localization are
studied with the help of low-temperature magneto-transport measurements. Doping and electronphonon coupling in graphene are studied using Raman spectroscopy.


devant le jury composé de :

M. Abhay SHUKLA Directeur de thèse
M. Henri HAPPY Rapporteur
M. Benoît JOUAULT Rapporteur
M. Bernard PLAÇAIS Examinateur
Mme. Brigitte LERIDON Examinateur, membre invité